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Details for article 13 of 16 found articles
| Title: |
Problems with cracking of Al<sub>x</sub>Ga<sub>1–x </sub>N layers |
| Author: |
Ewa Dumiszewska Dariusz Lenkiewicz Wlodek Strupinski Agata Jasik Rafal S. Jakiela Marek Wesolowski |
| Appeared in: |
Optica applicata |
| Paging: | Volume 35 (2005) nr. 1 pages 111-115 |
| Year: |
2005 |
| Contents: |
Al<sub>x</sub>Ga<sub>1–x</sub>N is a wide band-gap material, which can be used for manufacture of UV detectors. Unfortunately, there are problems with the cracking of those layers occurring above some critical thickness, which is a bit smaller from the one used for detectors (about 1 <font face="Symbol" size="3" color="#000808">m</font>m). Our investigation concentrated on the causes of crack formation. To avoid it we used so-called special AlN nucleation layer, which was to stop the relaxation. We obtained a strained layer free of cracking, but with a very big number of dislocations. We compared dislocation densities of strained and relaxed Al<sub>0.4</sub>Ga<sub>0.6</sub>N layers. The first one was characterized by a higher dislocation density than the second one. We also investigated the problem with cracking occurring in Al<sub>0.4</sub>Ga<sub>0.6</sub>N epitaxial layers during the doping, and how to control this process. The relaxation of the layers started for very low impurity densities and went on when we increased the amount of the dopant. |
| Publisher: |
Wroclaw University of Technology |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 16 found articles
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